b"INFINEON - FOR AN ENERGY SMART WORLD HARTINGInfineon CoolSiC 1200 V, 45 mthinQ! Silicon Carbide (SiC) Schottky SiC MOSFETDiode Best in class switching and conduction lossesThe Infineon thinQ! Generation 5 offers a newBenchmark high threshold voltage, Vth 4 V thin wafer technology for SiC Schottky Barrier0V turn-off gate voltage for easy and simple gate drive diodes improving the thermal characteristics Wide gate-source The SiC Schottky voltage range Diode devices offerRobust and lowadvantageous loss body diodehigh voltage power rated for hardsemiconductor commutation features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels 222-4865 52 A, 1200 V IMZ120R045M1XKSA1222-4867 26 A, 1200 V IMZ120R090M1HXKSA1222-4868 19 A, 1200 V, (Tube of 30) IMZ120R140M1HXKSA1 133-9945 1200V 56A IDH20G120C5XKSA1222-4872 4.7 A, 1200 V, (Tube of 30) IMZ120R350M1HXKSA1 133-9852 1200V 11.8A (Pack of 2) IDH02G120C5XKSA1Infineon EiceDRIVER IsolatedEvaluation Board For EiceDRIVERGate Driver The Infineon's evaluation board is in half-bridgeSingle channel isolated gate driver configuration with two-level slew-rate controlFor use with 600 V/650 V/1200 V/1700enabled gate driver ICs 1ED3241MC12HV/2300 V IGBTs, Si and SiC MOSFETsThis board enables the evaluation of the slew-rateUp to 14.0 A typical peak output current control switching40 V absolutescheme. The maximum outputswitch type can supply voltage be freely chosen228-6505 13.5 A, 35V 8-Pin (Pack of 5) 1ED3124MU12FXUMA1 232-5724 Evaluation Board EVAL1ED3241MC12HTOBO1Bridgeless Totem-Pole PFC Evaluation Board High efficiency bridgeless totem-pole PFC Perfect for high efficiency applications (close to 99%) Bidirectional operation (digital control) High power density Enabled by CoolSiC MOSFET 650V214-1996 PFC Controller EVAL3K3WTPPFCSICTOBO1au.rs-online.com13"